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NV9580 GAN FET POWER Navitas 800V 170MR GaNFast™ power IC, DFN 5*6mm New And Original
Classification:
Product
High frequency transformer
- Product Detail
-
- Commodity name: NV9580 GAN FET POWER Navitas 800V 170MR GaNFast™ power IC, DFN 5*6mm New And Original
- Commodity ID: 1342449585137274880
GaNSense™ Power FET
• Loss-less current sensing
• Low 170 mΩ power FET
• Zero reverse recovery charge
• Low output charge
• 800 V Transient Voltage Rating
• 700 V Continuous Voltage Rating
High Frequency QR Controller
• Wide VDD range up to 77V
• QR valley switching and CCM operating modes
• High frequency operation up to 225kHz
• High voltage start-up
• Frequency hopping for low EMI
• X-cap discharge
• OCP, SCP, OTP, LPS protection functions
• Ultra-low standby current consumption (<20mW)Small, low-profile SMT QFN
• 5 x 6 mm footprint, 0.85 mm profile
• Minimized package inductance
• Large cooling pad
High Power Density
• > 1W/cc achievable power density
• Small transformer size
• Low component count
Product Reliability
• 20-year limited product warranty
(see Section 14 for details)
2. Topologies / Applications
• High efficiency AC-DC power adapters
• USB PD/QC battery charger
• Mobile chargers, adapters, aux powerThis GaNSense™ Controller Co-pak IC integrates a high
performance eMode GaNSense Power FET together with an
HFQR Flyback controller to achieve unprecedented high-
frequency and high-efficiency operation for smallest size
mobile charger and adapter solutions. The GaNSense Power
FET includes loss-less current sensing, ultra-low gate charge,
low output charge, and 700V continuous and 800V transient
voltage ratings to provide excellent performance and
robustness. The HFQR Flyback controller enables high
frequency operation, wide VDD range, high-voltage start-up,
and multi-mode operation. The HFQR Flyback controller also
includes short circuit, over-temperature and LPS protection
features to increase system robustness, while ultra-low
standby current consumption increases light, tiny & no-load
efficiency. Low-profile, low-inductance, and small footprint
SMT QFN 5x6 packaging enables designers to achieve simple,
quick and reliable solutions. Navitas’ GaN IC technology
enables high frequencies, high efficiencies and low EMI to
achieve unprecedented power densities at a very attractive
cost structure
8613632534755
Address: 12F, Building C, Tongjian Building, Nanyuan Street, Futian District, Shenzhen
