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NV6245C GAN FET POWER Navitas 800V 275MR GaNFast™ power IC, DFN 6*8mm New And Original
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High frequency transformer
- Product Detail
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- Commodity name: NV6245C GAN FET POWER Navitas 800V 275MR GaNFast™ power IC, DFN 6*8mm New And Original
- Commodity ID: 1342449591244181504
GaNFast™ Power IC
• Two independent logic inputs with hysteresis
• 3.3, 5, 12 V PWM input compatible
• Floating high-side with internal level shift
• Integrated high-side bootstrap
• Shoot-through protection
• Wide V CC range (10 to 24 V)
• Low-side & high-side turn-on dV/dt control
• 800 V transient voltage rating
• 650 V continuous voltage rating
• 2 KV ESD Rating (HBM)
• 2 MHz operation
GaNSense™ Technology
• Integrated loss-less current sensing
• Short-circuit protection
• Over-temperature protection
• Autonomous low-current standby mode
• Auto-standby enable input
eMode GaN FETs
• 275 mΩ high-side FET
• 275 mΩ low-side FET
• Zero reverse recovery charge
Small, Efficient PQFN
• 6x8 mm footprint, 0.85 mm profile
• Minimized package inductance
• Enlarged cooling padsThis half-bridge GaNFast™ power IC integrates high
performance eMode GaN FETs with integrated gate drive,
control and protection to achieve unprecedented high-
frequency and high efficiency operation. GaNSense™
technology is also integrated which enables real-time,
accurate sensing of voltage, current and temperature to
further improve performance and robustness not achieved
by any discrete GaN or discrete silicon device. GaNSense™
enables integrated loss-less current sensing which
eliminates external current sensing resistors and increases
system efficiency. GaNSense™ also enables short circuit
and over-temperature protection to increase system
robustness, while auto-standby mode increases light, tiny &
no-load efficiency, These GaN ICs combine the highest
dV/dt immunity, high-speed integrated drive and thermally
optimized, low-inductance, QFN packaging to enable
designers to achieve simple, quick and reliable solutions.
Navitas’ GaN IC technology extends the capabilities of
traditional topologies such as active clamp flyback, half-
bridge, buck/boost, LLC and other resonant converters to
reach MHz+ frequencies with very high efficiencies and low
EMI to achieve unprecedented power densities at a very
attractive cost structure.The typical connection diagram for this GaN Half-Bridge IC is shown in Figure 3. The IC pins include the
drain of the high-side GaN power FET (V IN ), the half-bridge mid-point switched node (V SW ), the source of the
low-side GaN power FET and IC GND (P GND ), low-side IC supply (V CC ), low-side gate drive supply (V DDL ), low-
side turn-on dV/dt control (R DDL ), low-side 5V supply (5V L ), low-side referenced PWM inputs (IN L , IN H ), low-side
current sensing output (CS), auto-standby enable input (STBY), high-side supply (V B ), high-side gate drive
supply (V DDH ), high-side turn-on dV/dt control (R DDH ), and high-side 5V supply (5V H ). The external low-side
components around the IC include V CC supply capacitor (C VCC ) connected between V CC pin and P GND , V DDL
supply capacitor (C VDDL ) connected between V DDL pin and P GND , turn-on dV/dt set resistor (R DDL ) connected
between V DDL pin and R DDL pin, current sense amplitude set resistor (R SET ) connected between CS pin and P GND ,
5V supply capacitor (C 5VL ) connected between 5V L pin and P GND , and auto-standby enable pin (STBY)
connected to P GND to enable auto-standby mode or connected to 5V L to disable auto-standby mode. The
external high-side components around the IC include V B supply capacitor (C VB ) connected between V B pin and
V SW , V DDH supply capacitor (C VDDH ) connected between V DDH pin and V SW , and 5V supply capacitor (C 5VH )
connected between 5V H pin and V SW
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