EN
Our Product
产品中心
Product Category
CGL65R260B Cohenius 650V Enhancement-Mode GaN Power Transistor
Classification:
Product
Gallium Nitride
Cohenius
- Product Detail
-
- Commodity name: CGL65R260B Cohenius 650V Enhancement-Mode GaN Power Transistor
- Commodity ID: 1342449628779008000
Description
The series of devices are enhancement mode GaN on silicon power
transistors. The properties of GaN allow for high voltage breakdown and
high switching frequency. Both conduction and switching power losses
are minimized due to an extremely low combination of R DS(ON) and Q g ,
offer improved efficiency over silicon power transistor.
Features
● Ultra fast switching
● No reverse-recovery charge
● Capable of reverse conduction
● Low gate charge, low output charge
● Qualified for standard grade applications according to JEDEC
Application
● High Voltage AC/DC conversionHigh Voltage DC/DC conversion
High performance power supplies
Key performance Parameters at T j =25°C
Paremeter Value Unit
V DS,max 650 V
R DS(ON),typ 200 mΩ
Q G,typ 1.6 nC
I D 10 A
Q rr 0 nC
8613632534755
Address: 12F, Building C, Tongjian Building, Nanyuan Street, Futian District, Shenzhen
