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CGL65R190B Cohenius 650V 170MR Enhancement-Mode GaN Power Transistor
Classification:
Product
Gallium Nitride
Cohenius
- Product Detail
-
- Commodity name: CGL65R190B Cohenius 650V 170MR Enhancement-Mode GaN Power Transistor
- Commodity ID: 1342449630301540352
Description
The series of devices are enhancement mode GaN on silicon power transistors.
The properties of GaN allow for high voltage breakdown and high switching
frequency. Both conduction and switching power losses are minimized due
to an extremely low combination of R DS(ON) and Q g , offer improved efficiency
over silicon power transistor.
Features
● Ultra fast switching
● No reverse-recovery charge
● Capable of reverse conduction
● Low gate charge, low output charge
● Qualified for standard grade applications according to JEDEC
Application
● High Voltage AC/DC conversion● High Voltage DC/DC conversion
● High performance power supplies
Key performance Parameters at T j =25°C
Paremeter Value Unit
V DS,max 650 V
R DS(ON),typ 170 mΩ
Q G,typ 2.0 nC
I D 13 A
Q rr 0 nC
8613632534755
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