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SuperGaN Power FETs manufacturers explain
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SuperGaN Power FET
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Release time:
2022-06-27
SuperGaN Power FETs manufacturers know that GaN is a very stable compound and a hard high-melting material with a melting point of about 1700 °C. GaN has a high degree of ionization, which is the highest (0.5 or 0.43) among III-V compounds. At atmospheric pressure, GaN crystals generally have a hexagonal wurtzite structure. It has 4 atoms in one cell, and the atomic volume is about half that of GaAs. Because of its high hardness, it is also a good coating protection material.
At room temperature, GaN is insoluble in water, acids and bases, but dissolves very slowly in hot alkaline solutions. NaOH, H2SO4 and H3PO4 can rapidly corrode poor quality GaN and can be used for defect detection of these low quality GaN crystals. GaN exhibits unstable characteristics at high temperature under HCL or H2 gas, and is most stable under N2 gas.
The above is the relevant content of GaN explained by SuperGaN Power FETs manufacturers, hoping to help everyone.
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